Nexperia Introduces 750 V SiC Trench MOSFETs with TOLL Package Options
The new MOSFET family combines low switching losses, temperature-stable on-resistance and multiple package options for industrial and automotive power conversion.
Nexperia has introduced a new family of 750 V silicon carbide (SiC) trench MOSFETs, combining low switching losses, temperature-stable RDS(on) characteristics and robust switching performance. The launch also introduces TOLL packaging to Nexperia's SiC MOSFET portfolio, alongside its existing through-hole and surface-mount options.
The new devices are designed for industrial and automotive applications, including EV charging infrastructure, photovoltaic inverters, industrial drives, AI and high-performance computing power supplies, onboard chargers, DC-DC converters and auxiliary drives.
Switching Performance and On-Resistance Stability
The 750 V SiC MOSFETs combine low conduction and switching losses with RDS(on) stability across their operating temperature range. Fast switching speeds, temperature-stable turn-off behavior and a robust intrinsic body diode support operation in hard-switching topologies.
Extending Nexperia's portfolio into the 750 V voltage class also provides additional voltage headroom for operation under transient conditions.
TOLL Packaging for Power Conversion
A key addition to Nexperia's SiC MOSFET portfolio is the availability of TOLL packages. The surface-mount package combines a compact footprint with low package inductance, making it suitable for designs requiring high power density and high-frequency switching.
The TOLL package complements Nexperia's existing through-hole, bottom-cooled and top-cooled options, giving designers a choice of packages for different thermal, PCB layout and manufacturing requirements.
The new 750 V family is available in both industrial and AEC-Q101-qualified automotive variants.
Learn more and read the original announcement at nexperia.com.
Technology Overview
Nexperia's 750 V SiC trench MOSFET family is designed for industrial and automotive power conversion. The devices combine low conduction and switching losses, temperature-stable on-resistance and a robust intrinsic body diode for hard-switching applications. Package options include TOLL, through-hole, bottom-cooled and top-cooled configurations. Applications include EV charging, photovoltaic inverters, industrial drives, onboard chargers and DC-DC converters.
FAQs
What applications are Nexperia's 750 V SiC MOSFETs designed for?
The devices target EV charging infrastructure, photovoltaic inverters, industrial motor drives, onboard chargers, DC-DC converters and power supplies for AI and high-performance computing systems.
What are the main electrical characteristics of the new SiC MOSFETs?
The family combines low conduction and switching losses with temperature-stable RDS(on), fast switching performance, temperature-stable turn-off behavior and a robust intrinsic body diode.
What packaging and qualification options are available?
The 750 V family introduces TOLL packaging to Nexperia's SiC MOSFET range, alongside existing through-hole, bottom-cooled and top-cooled options. Both industrial and AEC-Q101-qualified automotive variants are available.
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