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Filtering by tag: "GeneSiC"

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Navitas GeneSiC 5th Gen SiC MOSFET Improves Switching Loss

Navitas 5th generation GeneSiC 1200V SiC MOSFET platform improves RDS(on) × QGD figure of merit, soft body diode behavior, and reliability for AI data centers, grid infrastructure, and industrial power conversion.

Navitas Semiconductor, GeneSiC, 5th generation SiC, 1200V SiC MOSFET, trench assisted planar, TAP technology, silicon carbide MOSFET, RDS(on) QGD FoM, soft body diode, AI data center power, grid infrastructure converters, industrial electrification, SiC reliability, dynamic reverse bias testing, high voltage power semiconductors

Navitas Introduces Isolated TO-247 Package for SiC MOSFETs

Navitas has launched the UHV-TO-247-4-ISO package for 1200 V, 2300 V, and 3300 V GeneSiC MOSFETs. The package combines integrated 6000 V isolation with direct-cooled thermal management, reducing thermal resistance by up to 60% and increasing power dissipation capability by up to 150%.

Navitas, GeneSiC, SiC MOSFET, Silicon Carbide, TO-247, UHV-TO-247-4-ISO, Power Electronics, Battery Energy Storage, Solid State Transformer, Renewable Energy, Power Conversion System, Thermal Management, High Voltage Isolation, AI Datacenter Power, AMB Substrate, Aluminum Nitride

Navitas GeneSiC 5th Gen SiC MOSFET Improves Switching Loss

Navitas Introduces Isolated TO-247 Package for SiC MOSFETs

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