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Filtering by tag: "TO-247"
Clear tag filterToshiba Super Junction MOSFETs Cut Losses In Fast Power Stages
Toshiba’s DTMOSVI 600V HSD super junction MOSFETs add built-in fast-recovery diodes to reduce reverse recovery losses in SMPS, UPS, and photovoltaic power circuits, with package options including TO-247, TOLL, and DFN8×8.
Read MoreNexperia Expands 650 V GaN FET Portfolio for High-Power Designs
Nexperia has expanded its 650 V GaN FET portfolio with 35 mΩ, 50 mΩ, and 70 mΩ devices in TO-247, TOLL, and TOLT packages. The devices target AI server power supplies, industrial drives, telecom systems, renewable energy, and battery energy storage applications.
Read MoreNavitas Introduces Isolated TO-247 Package for SiC MOSFETs
Navitas has launched the UHV-TO-247-4-ISO package for 1200 V, 2300 V, and 3300 V GeneSiC MOSFETs. The package combines integrated 6000 V isolation with direct-cooled thermal management, reducing thermal resistance by up to 60% and increasing power dissipation capability by up to 150%.
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