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Filtering by tag: "SiC"
Clear tag filterMicrochip Targets Solid-State Transformers With 3.3 kV SiC Modules
Microchip has introduced 3.3 kV HV-D3 mSiC power modules for solid-state transformers, combining SiC MOSFETs, Schottky diodes, and high-voltage isolation for AI data centers and medium-voltage power systems.
Read Moreonsemi EliteSiC Powers Schaeffler Inverter for Next-Gen PHEVs
Schaeffler selects onsemi’s EliteSiC MOSFETs for a new plug-in hybrid inverter platform, improving power density, thermal performance, and efficiency.
Read Moreonsemi and NVIDIA Collaborate on 800V DC Power Architecture for AI Data Centres
onsemi partners with NVIDIA to support 800V DC architectures, enabling high-efficiency, high-density power delivery across next-gen AI data centre infrastructure.
Read MoreYAGEO Film Capacitors Target EMI Stress in WBG Power
YAGEO’s R41D V234 Series is a family of Y2/X1 metallized polypropylene film capacitors for EMI suppression in SiC and GaN power systems, offering 300 VAC rating, 1200 VDC recommendation, high dV/dt capability, and increased ripple current handling.
Read MoreMicrochip and Delta Join Forces on SiC for Smarter Power Systems
Microchip and Delta partner to advance silicon carbide adoption in power systems for AI, automation, mobility, and green infrastructure.
Read MoreTDK B82722V6 Choke Supports 1250 V DC Designs
TDK’s B82722V6B040 common-mode choke series supports 1250 V DC converter and drive designs in a compact vertical package, with inductance options from 3.3 mH to 22 mH and rated currents up to 3.0 A for high-voltage EMI filtering.
Read MoreInfineon XENSIV TLE4978 Current Sensor Cuts Noise In Fast Power Loops
Infineon’s XENSIV TLE4978 is a coreless isolated magnetic current sensor combining Hall and coil sensing on one die, delivering 9 MHz bandwidth, low noise, fast overcurrent detection, and support for EV charging, DC-DC conversion, PV inverters, and AI server power.
Read MoreNexperia Expands Wide-Bandgap Portfolio with 1200 V SiC Schottky Diodes for High-Power Infrastructure
Nexperia’s 1200 V SiC Schottky diodes deliver zero recovery loss, high surge tolerance, and thermal reliability for AI, telecom, and solar systems.
Read MoreInfineon Raises SiC Module Temperature Limit To 205°C For EV Inverters
Infineon has introduced the FS01M9R13A7MA2B, a 1300 V HybridPACK Drive silicon carbide power module supporting continuous 205°C operation and up to 15% higher output current for EV traction inverters.
Read MoreSouth Korea Pushes For National Semiconductor Power Sovereignty
South Korea has launched a national task force led by Koo Sang-mo to achieve power semiconductor self-reliance by 2030, focusing on silicon carbide (SiC) and gallium nitride (GaN) technologies for EVs, power grids, AI data centers, defense, and robotics.
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