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Renesas 3nm TCAM Architecture Targets Automotive SoCs

Renesas introduces a 3nm FinFET TCAM architecture achieving 5.27 Mb/mm² density, 0.167 fJ per bit search energy, and enhanced functional safety for automotive SoCs, presented at ISSCC 2026.

Renesas, 3nm TCAM, automotive SoC, FinFET memory, ISSCC 2026, ISO 26262, functional safety memory, embedded TCAM, low power TCAM, high density memory, search acceleration, ECC architecture, automotive semiconductor, advanced node memory, 1.7GHz TCAM, cloud edge networking, content addressable memory, semiconductor research, high speed SoC memory

Chinese Researchers Create New 3D DRAM Technology

DRAM underpins modern computing, but traditional planar designs are struggling to scale as memory demands rise. Researchers at IME CAS have unveiled a novel 3D DRAM architecture using a dual-gate 4F2 2T0C cell, enabling higher density, multi-level storage, and improved performance, potentially paving the way for dramatically larger RAM capacities.

DRAM, 3D DRAM, memory technology, semiconductor research, high density memory, IME CAS, Chinese research, 3D memory, HBM, Hybrid Memory Cube, RAM scaling, computer memory, advanced semiconductors

Renesas 3nm TCAM Architecture Targets Automotive SoCs

Chinese Researchers Create New 3D DRAM Technology

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