Nexperia Expands Wide-Bandgap Portfolio with 1200 V SiC Schottky Diodes for High-Power Infrastructure

Nexperia has introduced two 1200 V SiC Schottky diodes, PSC20120J and PSC20120L, designed for high-efficiency power conversion in AI servers, telecom systems, and renewable energy applications. Each diode is rated for 20 A continuous current and targets performance-critical applications such as data centre power supplies, telecom infrastructure, and solar inverters, where space, heat, and switching losses are all under pressure.

These latest additions mark another step in Nexperia’s move into wide-bandgap semiconductors, offering engineers a solution that can operate reliably at high voltages and fast switching speeds, without the downsides of traditional silicon devices.

Fast Switching Without the Recovery Penalty

Both devices are designed to operate at 1200 V, with zero reverse recovery charge and switching behaviour that stays consistent across temperature. That last point matters, many rectifiers change behaviour at elevated temperatures, creating unwanted variability in high-reliability systems. These diodes avoid that by maintaining their characteristics even as things heat up.

Forward voltage drop is typically 1.5 V at 25 °C, with a maximum of 1.8 V, and remains manageable even at 150 °C, where it stays under 2.6 V. That gives engineers room to optimise for efficiency without worrying about sudden losses under load.

Built to Absorb Transients

Where these diodes really stand out is in surge handling. Thanks to their Merged PiN Schottky (MPS) construction, both the PSC20120J and PSC20120L can tolerate peak forward surge currents up to 710 A. That’s a significant margin, enough to absorb fault events or inrush without the need for additional clamping devices.

It also opens up the chance to reduce protection components, helping simplify designs and save board space, something every hardware engineer can appreciate.

Thermal Design Considerations

Thermal performance has clearly been a focus. Both parts are rated for continuous operation at up to 175 °C junction temperature, making them suitable for placement near heat-generating components. Designers can choose between two form factors depending on layout and cooling approach:

• The PSC20120J comes in a D2PAK (TO-263-2) surface-mount package
• The PSC20120L is housed in a TO-247 (TO-247-2) through-hole package

The thermal resistance from junction to case sits at around 0.8 K/W for the D2PAK and improves to 0.65 K/W with the TO-247 version, which supports more aggressive thermal management strategies in high-power systems.

Application Areas

These devices are a good fit for any system that needs to move power quickly and efficiently while staying cool and reliable. Typical use cases include:

• Power supplies for AI accelerators and data centre infrastructure, where energy efficiency directly impacts running costs
• Telecom rectifiers and infrastructure equipment, where fast switching with low EMI and small footprints is crucial
• Solar inverters and renewable energy systems, which demand robustness against rapid load and temperature swings
• Industrial power systems and EV charging, where compact, efficient power delivery is non-negotiable

In all of these environments, engineers need parts that combine low switching losses, predictable behaviour, and high tolerance for transient events. These SiC diodes tick each of those boxes.

Compliance and Manufacturing Notes

Both diodes are RoHS compliant, and Nexperia notes that the mould compound used is PFAS-free, a detail that will matter more as regulations tighten. Devices are supported by Nexperia’s global supply chain and manufactured to automotive-grade standards, including IATF 16949 and ISO 9001.

Their rugged design, strong surge capability, and thermal headroom also contribute to reduced system-level component counts, an added benefit for manufacturers looking to improve reliability and lower material costs.

Read the original announcement here.

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