onsemi Launches GaNEXUS GaN Power Portfolio

onsemi has introduced GaNEXUS, a new gallium nitride (GaN) power portfolio that expands the company's power semiconductor offering alongside its existing silicon and EliteSiC technologies. The initial release includes GaN FETs covering voltages from 40 V to 650 V, as well as 650 V GaNEXUS Smart devices with integrated protection features.

The GaNEXUS family is a portfolio of gallium nitride power devices used in applications including AI data center power delivery, 48 V power systems, industrial automation, robotics, and energy infrastructure.

40 V to 650 V GaN Devices

The initial GaNEXUS portfolio includes devices spanning voltage ratings from 40 V to 650 V. The family also introduces 650 V GaNEXUS Smart devices that integrate protection functions within the power device.

According to onsemi, the portfolio is intended to support a range of power conversion architectures across low-, medium-, and high-voltage systems. The devices are sampling now.

AI And Power Conversion Applications

onsemi identifies AI server intermediate bus converters (IBC), battery backup units (BBU), motor drives, power-factor correction (PFC) stages, LLC converters, and high-voltage DC-DC converters among the target applications for the portfolio.

The company also cites AI power shelves, robotics, industrial automation systems, EV charging equipment, and energy infrastructure as intended deployment areas.

Power Density And Efficiency Figures

For low- and medium-voltage applications, onsemi states that GaNEXUS can reduce magnetics size by approximately 30% to 60%, while increasing power density by around 1.5x to 2x. onsemi also cites efficiency improvements of 0.5% to 2%, depending on topology.

In higher-voltage applications, including PFC, LLC, and high-voltage DC-DC stages, onsemi reports up to 60% smaller magnetics, power-density improvements of approximately 1.5x to 2x, and efficiency gains of 0.5% to 1%.

The company also highlights reduced switching losses and lower thermal stress in high-power systems.

Package Options And Treo Integration

GaNEXUS devices are available in thermally enhanced packages using industry-standard footprints. Package options include TOLL bottom-cooled, TOLT top-cooled, and dual-cooling 3.3 mm × 3.3 mm and 5 mm × 6 mm formats.

The portfolio can also be combined with onsemi's Treo platform, which integrates sensing, control, protection, and power-management functions within a broader power-system architecture.

Learn more and read the original announcement at www.onsemi.com

Technology Overview

The GaNEXUS portfolio consists of gallium nitride power devices spanning voltage ratings from 40 V to 650 V. The family includes standard GaN FETs and 650 V GaNEXUS Smart devices with integrated protection features, and is available in TOLL, TOLT, and dual-cooling package options.

Frequently Asked Questions

What voltage range does the GaNEXUS portfolio cover?

The initial portfolio includes devices with voltage ratings from 40 V to 650 V.

What are GaNEXUS Smart devices?

GaNEXUS Smart devices are 650 V GaN FETs that integrate protection functions within the power device.

Which applications does onsemi identify for GaNEXUS?

Target applications include AI server power delivery, battery backup units, motor drives, EV charging equipment, power-factor correction stages, LLC converters, and high-voltage DC-DC power systems.