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Toshiba 600 V Super Junction MOSFET Targets High-Density Power Systems

Toshiba’s TK057V60Z brings lower loss and a compact DFN8×8 package to 600 V power supplies used in data centres, UPS systems and solar equipment.

toshiba, tk057v60z, dtmosvi, super junction mosfet, 600 v mosfet, dfn8×8, kelvin source, power supplies, ups, data centre, photovoltaic, switching efficiency

Navitas Expands GaN and SiC Power Devices for 800 V AI Data Centres

Navitas extends its GaNFast and GeneSiC semiconductor portfolio to support NVIDIA’s 800 V AI data-centre architecture with higher efficiency and density.

navitas semiconductor, ganfast, genesic, sic, gan, 800 v, ai data centre, power conversion, wide bandgap, gansafe, power chip, data centre, semiconductors, power management

Toshiba 650V SiC MOSFETs Boost Efficiency With Compact TOLL Package

Toshiba has launched 3rd generation 650V SiC MOSFETs in a compact TOLL package, cutting switching losses and improving power density for industrial and energy systems.

toshiba, sic, mosfet, wide bandgap, power electronics, toll package, data centre, ups, ev charging, pv inverter

Toshiba 600 V Super Junction MOSFET Targets High-Density Power Systems

Navitas Expands GaN and SiC Power Devices for 800 V AI Data Centres

Toshiba 650V SiC MOSFETs Boost Efficiency With Compact TOLL Package

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