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ROHM 5th Gen SiC MOSFETs Reduce High-Temp Losses

ROHM has introduced 5th Generation EcoSiC MOSFETs for EV and industrial power systems, claiming about 30% lower ON resistance at 175°C than its 4th Generation devices, with discrete and module samples scheduled from July 2026.

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YAGEO Targets WBG EMI Filters With R41D V234 Capacitors

YAGEO’s R41D V234 Series brings high dV/dt and increased ripple current capability to Y2/X1 film capacitors for SiC and GaN power systems, helping shrink EMI filters in automotive and industrial power conversion designs.

YAGEO, R41D V234, film capacitor, EMI suppression capacitor, Y2 capacitor, X1 capacitor, metallized polypropylene, wide bandgap, SiC, GaN, EMI filter, onboard charger, DC-DC converter, solar inverter, energy storage system, EV charging station, three-phase UPS, HVDC filter, high dV/dt, ripple current

Taiwan Semiconductor Launches 1200V SiC MPS Diodes up to 40A

Taiwan Semi introduces 1200V SiC Schottky diodes with MPS design, qualified for automotive and industrial systems, available in ratings up to 40A.

Taiwan Semiconductor, SiC diode, 1200V, MPS, wide bandgap, Schottky, EV charging, energy storage, UPS, telecom power, rectifier

SemiQ Expands 1200 V Gen3 SiC MOSFET Line with New SOT-227 Modules

SemiQ has released new 1200 V Gen3 SiC MOSFET SOT-227 modules with 7.4, 14.5 and 34 mΩ options for chargers, solar inverters and high-power systems.

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onsemi Introduces Vertical GaN Semiconductors for High-Density Power Systems

onsemi introduces vertical GaN-on-GaN power semiconductors with 700 V and 1,200 V capability, cutting switching losses and boosting power density for AI and EV systems.

onsemi, vertical gan, vgan, gan-on-gan, power semiconductors, ai data centres, electric vehicles, renewable energy, energy storage, high voltage, power density, efficiency, power conversion, wide bandgap, high frequency

Navitas Expands GaN and SiC Power Devices for 800 V AI Data Centres

Navitas extends its GaNFast and GeneSiC semiconductor portfolio to support NVIDIA’s 800 V AI data-centre architecture with higher efficiency and density.

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Toshiba 650V SiC MOSFETs Boost Efficiency With Compact TOLL Package

Toshiba has launched 3rd generation 650V SiC MOSFETs in a compact TOLL package, cutting switching losses and improving power density for industrial and energy systems.

toshiba, sic, mosfet, wide bandgap, power electronics, toll package, data centre, ups, ev charging, pv inverter

Renesas Launches Gen IV Plus 650V GaN FETs

Renesas unveils Gen IV Plus 650V GaN FETs for AI, EV, and industrial power—smaller die, better efficiency, and silicon driver compatibility.

Renesas, GaN, power electronics, wide bandgap, energy efficiency, EV charging, AI data centres, UPS, solar inverters, transistors, industrial systems, high voltage, switching devices

ROHM 5th Gen SiC MOSFETs Reduce High-Temp Losses

YAGEO Targets WBG EMI Filters With R41D V234 Capacitors

Taiwan Semiconductor Launches 1200V SiC MPS Diodes up to 40A

SemiQ Expands 1200 V Gen3 SiC MOSFET Line with New SOT-227 Modules

onsemi Introduces Vertical GaN Semiconductors for High-Density Power Systems

Navitas Expands GaN and SiC Power Devices for 800 V AI Data Centres

Toshiba 650V SiC MOSFETs Boost Efficiency With Compact TOLL Package

Renesas Launches Gen IV Plus 650V GaN FETs

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