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ST Expands 700V PowerGaN Devices For AI And Robotics

STMicroelectronics has added seven 700V PowerGaN HEMTs to its STPOWER portfolio, targeting AI servers, robotics, industrial power systems, and high-density power conversion designs with current ratings up to 29 A.

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Power Integrations Pushes Flyback Into 440 W Range

Power Integrations has introduced TOPSwitchGaN flyback ICs that push offline flyback power supplies to 440 W, offering a simpler alternative to resonant and LLC designs in appliances, e-bike chargers, and industrial systems.

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Microchip Expands High Voltage Lineup With New 600V Gate Driver Family

Microchip’s new 600V gate drivers support fast switching and noise tolerant control for high voltage motor and power systems.

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GlobalFoundries and Navitas Advance U.S. GaN Manufacturing for AI Datacenters and High-Power Systems

GlobalFoundries and Navitas form a long-term partnership to expand U.S. GaN technology and manufacturing for AI datacenters, energy and high-power systems.

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Vishay Introduces MKP1848e DC-Link Capacitor For Harsh Environments

Vishay’s MKP1848e film capacitor handles +125 °C operation, 44.5 A ripple current, and AEC-Q200 qualification for EV, industrial, and energy power systems.

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Vishay Adds Gen 3 SiC Schottky Diodes in SlimSMA Package for Power Efficiency

Vishay launches new Gen 3 650 V and 1200 V SiC Schottky diodes with high isolation, compact size, and fast switching performance.

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YAGEO PTLA Transformer Integrates Resonant Inductance For LLC

YAGEO expands its power magnetics portfolio with the PTLA / PTLC Series LLC transformers delivering up to 3.6 kW while integrating resonant inductance directly into the magnetic structure to reduce component count and improve power density.

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SemiQ Expands 1200 V Gen3 SiC MOSFET Line with New SOT-227 Modules

SemiQ has released new 1200 V Gen3 SiC MOSFET SOT-227 modules with 7.4, 14.5 and 34 mΩ options for chargers, solar inverters and high-power systems.

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onsemi Introduces Vertical GaN Semiconductors for High-Density Power Systems

onsemi introduces vertical GaN-on-GaN power semiconductors with 700 V and 1,200 V capability, cutting switching losses and boosting power density for AI and EV systems.

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Toshiba Expands DTMOSVI 600 V MOSFET Series with Four-Pin Package for Higher Efficiency

Toshiba’s new DTMOSVI 600 V MOSFETs in the TO-247-4L(X) package reduce switching loss and improve efficiency for servers, UPS and PV inverters.

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