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Chinese Researchers Create New 3D DRAM Technology

DRAM underpins modern computing, but traditional planar designs are struggling to scale as memory demands rise. Researchers at IME CAS have unveiled a novel 3D DRAM architecture using a dual-gate 4F2 2T0C cell, enabling higher density, multi-level storage, and improved performance, potentially paving the way for dramatically larger RAM capacities.

DRAM, 3D DRAM, memory technology, semiconductor research, high density memory, IME CAS, Chinese research, 3D memory, HBM, Hybrid Memory Cube, RAM scaling, computer memory, advanced semiconductors

Chinese Researchers Create New 3D DRAM Technology

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