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ROHM Launches 650 V IGBTs with Low Conduction Loss

ROHM launches 4th Generation 650 V IGBTs with VCE(sat) as low as 1.55 V, 7 µs short-circuit withstand time and AEC-Q101 compliance for automotive and industrial applications.

ROHM, ROHM Semiconductor, IGBT, 650 V IGBT, 4th Generation IGBT, EcoIGBT, power semiconductor, power transistor, discrete semiconductor, RGA Series, RGAxxTS65HR, RGAxxTS65EHR, SG83xxWN, TO-247N, TO-247-4L, AEC-Q101, automotive electronics, automotive power, electric compressor, HV heater, PTC heater, coolant heater, industrial inverter, industrial power, power electronics, short-circuit tolerance, VCE(sat), fast recovery diode

ROHM Launches 650 V IGBTs with Low Conduction Loss

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