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Filtering by tag: "power transistor"
Clear tag filterROHM Launches 650 V IGBTs with Low Conduction Loss
ROHM launches 4th Generation 650 V IGBTs with VCE(sat) as low as 1.55 V, 7 µs short-circuit withstand time and AEC-Q101 compliance for automotive and industrial applications.
Read MoreEPC Launches EPC2370 GaN FET for AI Server Power
EPC starts mass production of the EPC2370 18 V GaN FET, offering 0.28 mΩ typical RDS(on), 101 A continuous current and a 22 V transient rating for high-current AI server and DC/DC power conversion.
Read MoreEPC GaN Inverter Board Targets Faster BLDC Prototyping
EPC’s EPC91121 gives engineers a compact three-phase GaN inverter platform for 24 V-class BLDC development, combining 50 ARMS output, integrated sensing, controller support, and switching up to 150 kHz.
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