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Filtering by tag: "power semiconductor"
Clear tag filterROHM Launches 650 V IGBTs with Low Conduction Loss
ROHM launches 4th Generation 650 V IGBTs with VCE(sat) as low as 1.55 V, 7 µs short-circuit withstand time and AEC-Q101 compliance for automotive and industrial applications.
Read MoreEPC Launches EPC2370 GaN FET for AI Server Power
EPC starts mass production of the EPC2370 18 V GaN FET, offering 0.28 mΩ typical RDS(on), 101 A continuous current and a 22 V transient rating for high-current AI server and DC/DC power conversion.
Read MoreROHM 5th Gen SiC MOSFETs Reduce High-Temp Losses
ROHM has introduced 5th Generation EcoSiC MOSFETs for EV and industrial power systems, claiming about 30% lower ON resistance at 175°C than its 4th Generation devices, with discrete and module samples scheduled from July 2026.
Read MoreRenesas Unveils Bidirectional 650 V GaN Switch For Simpler Power Stages
Renesas has launched the TP65B110HRU, a 650 V-class bidirectional GaN switch that blocks current in both directions in one device, helping simplify solar microinverters, AI data center power systems, and onboard EV chargers.
Read MoreDiodes Shrinks High-Current MOSFETs For 48 V Vehicles
Diodes has introduced the 100 V DMTH10H1M7SPGWQ in its PowerDI8080-5 package, bringing 1.5 mΩ max RDS(ON) to 48 V automotive motor drives, battery disconnect switches, onboard chargers, and other compact high-current designs.
Read MoreToshiba Wettable-Flank MOSFETs Shift Package Priorities
Toshiba has launched five automotive MOSFETs in its DFN2020B(WF) package, combining wettable flanks, better AOI visibility, stronger solder-joint performance, and a smaller footprint for compact vehicle power designs.
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