Next-gen SOP Advance(E) package reduces on-resistance by 21%, enhances thermal performance for power supplies in demanding environments

Toshiba Electronics Europe has introduced two new N-channel MOSFETs, TPM1R908QM (80V) and TPM7R10CQ5 (150V), that make a strong case for smarter packaging as the key to performance gains in power electronics.

Both devices debut the company’s new SOP Advance(E) package, a compact thermally optimised design that cuts package resistance by 65% and thermal resistance by 15% compared to the previous generation SOP Advance(N). This packaging shift alone enables noticeable improvements in heat dissipation and overall efficiency for designers working in high-density applications such as industrial SMPS, data centre infrastructure, and base station equipment.

Package Innovation Driving Device Performance

With reduced electrical and thermal resistance at the package level, the new MOSFETs offer 21% lower RDS(on) and 15% better thermal resistance (Rth(ch-c)) compared to earlier Toshiba equivalents.

For example:

• The TPM1R908QM outperforms its predecessor (TPH2R408QM) at 80V, with an RDS(on) of just 1.9mΩ, ID up to 238A, and Rth(ch-c) of 0.6°C/W.
• The TPM7R10CQ5 improves upon the TPH9R00CQ5 at 150V, offering 7.1mΩ RDS(on) and ID of 120A, plus the added benefit of a high-speed body diode optimised for synchronous rectification.

These values are measured at VGS = 10V and Tc = 25°C, and both devices support operation up to 175°C.

Real-World Efficiency Gains

The improved thermal handling means less temperature-induced resistance drift, helping designers maintain efficiency under load. For power supply engineers, that translates into lower conduction losses and cooler operation, even when space is tight and airflow is limited.

Add in the SOP Advance(E)’s compact footprint, just 4.9mm × 6.1mm, and these parts become a compelling drop-in for high-performance SMPS topologies where board space and heat dissipation go hand in hand.

Simulation Support Included

To help engineers fast-track their designs, Toshiba provides both G0 SPICE models for quick verification and G2 SPICE models for accurate transient analysis.

With these releases, Toshiba continues to push its MOSFET portfolio forward, focusing not just on raw device performance but on total system efficiency, an increasingly critical goal for modern industrial equipment.

Where to Buy

The TPM1R908QM and TPM7R10CQ5 are available now from authorised distributors via oemsecrets.com. Use the links below to compare real-time prices and inventory:

• TPM1R908QM - 80V, 238A N-channel MOSFET in SOP Advance(E)
• TPM7R10CQ5 - 150V, 120A N-channel MOSFET with high-speed body diode

To learn more and read the original announcement, click here.

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