Infineon Launches 120 V Dual-Channel Gate Driver for High-Density Power Designs

Infineon has introduced the EiceDRIVER 2EDL6014AC-G2D, a dual-channel floating output gate driver designed for high-density silicon power conversion in AI data centers.

The new device provides two completely independent floating gate-driver channels in a 2.2 × 2.2 mm WQFN-12 package. Each channel can drive a high-side MOSFET operating at up to 120 V, while separate control inputs allow the driver to support dual high-side, dual low-side and half-bridge configurations.

This flexibility is aimed particularly at switched-capacitor and multilevel power topologies, where multiple switches need to be controlled within increasingly compact power stages.

Two Floating Channels with Independent Control

Each channel of the 2EDL6014AC-G2D provides 4 A source and 6 A sink current. Separate INA and INB inputs mean the two channels can be controlled independently rather than operating as a fixed pair.

Infineon has also integrated deglitch filtering on the inputs for noise immunity in densely populated power designs. The input stage accepts both 3.3 V and 5 V logic and can be connected directly to microcontroller ground.

Both floating output supplies have their own undervoltage lockout. If the supply to one channel falls below the required level, its output is forced low. This provides defined gate-driver behavior during conditions such as system startup, when the floating supplies may not yet have reached their normal operating voltage.

A 2.2 mm Package for Dense Power Stages

Much of the appeal of the 2EDL6014AC-G2D comes from fitting the two independent channels into a 2.2 × 2.2 mm footprint. Infineon is positioning the device for power architectures where PCB area and thermal performance need to be considered alongside gate-drive capability.

The WQFN-12 package includes an exposed pad to provide a low-thermal-impedance path for heat dissipation. Combined with the dual floating outputs, the package gives designers one gate-driver IC that can be configured around several different silicon MOSFET power-stage arrangements.

Infineon specifically identifies switched-capacitor and multilevel converters used in AI server power delivery as target applications for the device. These architectures can use the driver in dual high-side, dual low-side or half-bridge configurations depending on the arrangement of the switching stage.

Samples of the EiceDRIVER 2EDL6014AC-G2D are available now.

Learn more and read the original announcement at infineon.com

Technology Overview

The Infineon EiceDRIVER 2EDL6014AC-G2D is a 120 V junction-isolated dual-channel floating output gate driver for high-density silicon power conversion. Its two independently controlled channels support dual high-side, dual low-side and half-bridge configurations, with 4 A source and 6 A sink current per channel.

FAQs

What is the Infineon 2EDL6014AC-G2D?

The 2EDL6014AC-G2D is a 120 V dual-channel floating output gate driver. It integrates two independently controlled gate-driver channels in a 2.2 × 2.2 mm WQFN-12 package.

What power-stage configurations does the 2EDL6014AC-G2D support?

The device supports dual high-side, dual low-side and half-bridge configurations. Separate INA and INB inputs provide independent control of its two floating output channels.

Where can the 2EDL6014AC-G2D be used?

Infineon is targeting the device at high-density silicon power designs, particularly switched-capacitor and multilevel power-conversion topologies used in AI server power systems.