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Amphenol TS1 Connectors Handle High Power in Harsh Systems

Amphenol TS1 power connectors deliver high voltage and high current performance with EMI shielding for harsh industrial and energy systems.

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SemiQ Gen3 SiC Modules Push Current Density for High Power Systems

New SiC power modules offer high current capability and low thermal resistance for EV and industrial systems.

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SemiQ Dual3 SiC Modules Push IGBT Drop-In Further

SemiQ’s 1200 V QSiC Dual3 half-bridge modules combine low RDSon SiC MOSFETs, optional Schottky diodes, and high power density to help replace IGBT modules in data center cooling, energy storage, and industrial power converters.

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Littelfuse 200 V X4-Class MOSFET Targets High-Current Power Systems

The Littelfuse MMIX1T500N20X4 delivers 200 V and 480 A performance with topside cooling for compact high current power systems.

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onsemi Introduces Top Cool SiC Packaging for High Power Designs

onsemi adds a top cool T2PAK package to its EliteSiC MOSFETs, improving thermal performance and power density for EV and industrial designs.

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Infineon Raises the Bar in Coreless Current Sensing with New XENSIV Devices

Infineon’s new TLE4971 and TLI4971 sensors achieve 0.7 percent total error, providing high-precision, coreless current measurement for automotive and industrial power systems.

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Taiwan Semiconductor Launches 1200V SiC MPS Diodes up to 40A

Taiwan Semi introduces 1200V SiC Schottky diodes with MPS design, qualified for automotive and industrial systems, available in ratings up to 40A.

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Bourns Announces High-Heat Thick Film Resistor Series

Bourns unveils the PF2270 resistor series in a compact TO-227 package, supporting up to 300W power dissipation and high-temperature operation.

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SemiQ Expands 1200 V Gen3 SiC MOSFET Line with New SOT-227 Modules

SemiQ has released new 1200 V Gen3 SiC MOSFET SOT-227 modules with 7.4, 14.5 and 34 mΩ options for chargers, solar inverters and high-power systems.

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onsemi Introduces Vertical GaN Semiconductors for High-Density Power Systems

onsemi introduces vertical GaN-on-GaN power semiconductors with 700 V and 1,200 V capability, cutting switching losses and boosting power density for AI and EV systems.

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