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Filtering by tag: "UPS"
Clear tag filterROHM 5th Gen SiC MOSFETs Reduce High-Temp Losses
ROHM has introduced 5th Generation EcoSiC MOSFETs for EV and industrial power systems, claiming about 30% lower ON resistance at 175°C than its 4th Generation devices, with discrete and module samples scheduled from July 2026.
Read MoreYAGEO Film Capacitors Target EMI Stress in WBG Power
YAGEO’s R41D V234 Series is a family of Y2/X1 metallized polypropylene film capacitors for EMI suppression in SiC and GaN power systems, offering 300 VAC rating, 1200 VDC recommendation, high dV/dt capability, and increased ripple current handling.
Read MoreRenesas Launches Gen IV Plus 650V GaN FETs
Renesas unveils Gen IV Plus 650V GaN FETs for AI, EV, and industrial power—smaller die, better efficiency, and silicon driver compatibility.
Read MoreToshiba Super Junction MOSFETs Cut Losses In Fast Power Stages
Toshiba’s DTMOSVI 600V HSD super junction MOSFETs add built-in fast-recovery diodes to reduce reverse recovery losses in SMPS, UPS, and photovoltaic power circuits, with package options including TO-247, TOLL, and DFN8×8.
Read MoreTDK Expands Ferrite Core Range for High-Power Industrial Applications
TDK launches an industry-leading lineup of large-size ferrite cores for EVs, renewables, traction systems, and more.
Read MoreTaiwan Semiconductor Launches 1200V SiC MPS Diodes up to 40A
Taiwan Semi introduces 1200V SiC Schottky diodes with MPS design, qualified for automotive and industrial systems, available in ratings up to 40A.
Read MoreNexperia Brings QDPAK Packaging to 1200 V SiC MOSFETs
Nexperia has introduced 1200 V SiC MOSFETs in QDPAK top-side cooled packaging. The portfolio includes 17 mΩ to 80 mΩ variants, delivers up to 3 kW higher output power than D2PAK-7 devices, and targets EV, industrial, renewable energy, and datacenter power systems.
Read MoreToshiba Expands TC75W Comparators for Overcurrent Detection
Toshiba’s TC75W71FU CMOS dual comparator targets fast overcurrent detection in industrial equipment with 30 ns to 45 ns propagation delay, rail-to-rail input and output operation, and a 1.8 V to 5.5 V supply range.
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