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Clear tag filterAOS Backs NVIDIA’s 800 VDC Power Architecture With SiC and GaN for Next-Generation AI Factories
AOS introduces SiC, GaN and MOSFET solutions to support NVIDIA’s 800 VDC architecture for high-efficiency AI data centers, from AC-to-DC conversion to rack-level power stages.
Read MoreResearchers Create New Gallium Oxide Semiconductor With Superior Current Capabilities
Researchers at Nagoya University have developed stable p-type gallium oxide (Ga₂O₃) diodes capable of handling twice the current of previous devices, addressing a key limitation that held the material back. Could this breakthrough make Ga₂O₃ a practical alternative to GaN, and what applications will benefit most from its improved efficiency?
Read MoreNexperia USB PD Controllers Simplify 18 to 140 W Charger Designs
Nexperia’s USB PD controllers support 18 to 140 W adapters with embedded MCUs, fast-charging compatibility, and onboard protection.
Read MoreInfineon Raises the Bar in Coreless Current Sensing with New XENSIV Devices
Infineon’s new TLE4971 and TLI4971 sensors achieve 0.7 percent total error, providing high-precision, coreless current measurement for automotive and industrial power systems.
Read MoreNavitas and Cyient Partnership Aims to Strengthen India’s GaN Ecosystem
Partnership aims to build a complete GaN ecosystem for high power designs in India.
Read MoreEPC Launches Radiation-Hardened GaN Motor Drive Evaluation Board for Space Applications
The EPC7C021 from EPC Space is a compact, radiation-hardened GaN motor drive board for use in space and aerospace environments.
Read MoreGlobalFoundries and Navitas Advance U.S. GaN Manufacturing for AI Datacenters and High-Power Systems
GlobalFoundries and Navitas form a long-term partnership to expand U.S. GaN technology and manufacturing for AI datacenters, energy and high-power systems.
Read MoreQorvo Advances Solid-State Power with Compact Wideband SSPAs
Qorvo’s new wideband Spatium SSPAs deliver TWTA-level performance with up to 50% smaller footprint and higher reliability for radar, SATCOM, and EW systems.
Read MoreEPC’s GaN Integration Brings New Agility to Robotic Motion
EPC’s EPC91120 reference design combines GaN power, sensing, and control in a 32 mm module, improving efficiency and responsiveness in robot joints and UAVs.
Read MoreNavitas Expands GaN and SiC Power Devices for 800 V AI Data Centres
Navitas extends its GaNFast and GeneSiC semiconductor portfolio to support NVIDIA’s 800 V AI data-centre architecture with higher efficiency and density.
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