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Filtering by tag: "power electronics"
Clear tag filterSTMicroelectronics Pushes 800 VDC Power Closer to AI GPUs
STMicroelectronics expands its 800 VDC power architecture with new 12V and 6V conversion stages, enabling more efficient power delivery closer to GPUs in high-density AI data center infrastructure.
Read MoreRECOM RVP6501 Push-Pull Driver Supports Discrete DC/DC
RECOM introduces the RVP6501 push-pull transformer driver IC for discrete isolated DC/DC converters, delivering 500mA drive capability with adaptive dead-time control and current monitoring.
Read MoreRECOM Opens Up Discrete Isolated Power Supply Design
RECOM has introduced new SMD transformers and matching power ICs for discrete isolated DC/DC converter designs, supporting flyback, push-pull, and full-bridge topologies from 1W to 30W.
Read MoreWolfspeed Launches 200 mm SiC Wafers for High-Volume Power Device Production
Wolfspeed’s 200 mm SiC wafers and epitaxy are now commercially available, improving yields and scalability for power electronics makers worldwide.
Read MoreInfineon Expands OptiMOS 6 Portfolio with 150 V Automotive MOSFETs
Infineon’s OptiMOS 6 150 V MOSFETs deliver 2.5 mΩ RDS(on), low switching losses, and thermal resistance of 0.4 K/W, with TOLL, TOLG, and TOLT packaging for xEV designs.
Read MorePower Integrations Pushes Flyback Into 440 W Range
Power Integrations has introduced TOPSwitchGaN flyback ICs that push offline flyback power supplies to 440 W, offering a simpler alternative to resonant and LLC designs in appliances, e-bike chargers, and industrial systems.
Read MoreEPC’s First Gen 7 eGaN FET Pushes Power Density in 40 V Designs
EPC’s new 40 V Gen 7 eGaN transistor offers low RDS(on) and reduced switching loss for compact, high efficiency power stages.
Read MoreST Introduces GaNSPIN Drivers to Bring GaN Efficiency to Motor Control
ST’s GaNSPIN GaN drivers bring wide-bandgap efficiency to BLDC motor control in appliances and industrial systems with integrated protection and tunable switching.
Read MoreRenesas Launches Gen IV Plus 650V GaN FETs
Renesas unveils Gen IV Plus 650V GaN FETs for AI, EV, and industrial power—smaller die, better efficiency, and silicon driver compatibility.
Read MoreResearchers Create New Gallium Oxide Semiconductor With Superior Current Capabilities
Researchers at Nagoya University have developed stable p-type gallium oxide (Ga₂O₃) diodes capable of handling twice the current of previous devices, addressing a key limitation that held the material back. Could this breakthrough make Ga₂O₃ a practical alternative to GaN, and what applications will benefit most from its improved efficiency?
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