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Clear tag filterTI Unveils Power Solutions for Scalable AI Data Centres
Texas Instruments introduces new power management solutions and design resources to support scalable 800V AI data centre architectures.
Read MoreAOS Backs NVIDIA’s 800 VDC Power Architecture With SiC and GaN for Next-Generation AI Factories
AOS introduces SiC, GaN and MOSFET solutions to support NVIDIA’s 800 VDC architecture for high-efficiency AI data centers, from AC-to-DC conversion to rack-level power stages.
Read MoreEPC Launches Radiation-Hardened GaN Motor Drive Evaluation Board for Space Applications
The EPC7C021 from EPC Space is a compact, radiation-hardened GaN motor drive board for use in space and aerospace environments.
Read MorePower Integrations Launches GaN Reference Kit for Solar Race Cars
Power Integrations launches a GaN-based reference kit for solar race cars, offering 95% efficiency and a heatsink-free design.
Read MoreEPC Unveils 5 kW GaN AC DC System for AI and Data Center Racks
EPC demonstrates a 5 kW GaN AC DC reference design improving efficiency and power density for AI servers and data center racks.
Read MoreInfineon Unveils 12 kW High-Density PSU Reference Design for AI Data Centers
Infineon’s 12 kW PSU reference design hits over 99% efficiency and 113 W/in³ power density using Si, SiC, and GaN technologies.
Read MoreNavitas and Cyient Partnership Aims to Strengthen India’s GaN Ecosystem
Partnership aims to build a complete GaN ecosystem for high power designs in India.
Read MoreGlobalFoundries and Navitas Advance U.S. GaN Manufacturing for AI Datacenters and High-Power Systems
GlobalFoundries and Navitas form a long-term partnership to expand U.S. GaN technology and manufacturing for AI datacenters, energy and high-power systems.
Read MoreNavitas Expands GaN and SiC Power Devices for 800 V AI Data Centres
Navitas extends its GaNFast and GeneSiC semiconductor portfolio to support NVIDIA’s 800 V AI data-centre architecture with higher efficiency and density.
Read MoreResearchers Create New Gallium Oxide Semiconductor With Superior Current Capabilities
Researchers at Nagoya University have developed stable p-type gallium oxide (Ga₂O₃) diodes capable of handling twice the current of previous devices, addressing a key limitation that held the material back. Could this breakthrough make Ga₂O₃ a practical alternative to GaN, and what applications will benefit most from its improved efficiency?
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