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EPC Introduces 23 mm GaN Inverter for Robots and Drones

EPC has introduced the EPC91132, a 23 mm diameter GaN-based BLDC motor drive inverter for drones and humanoid robots. Built around the EPC33110 power module, the design delivers 11 ARMS continuous current at 48 V and supports PWM frequencies up to 100 kHz.

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Nexperia Expands 650 V GaN FET Portfolio for High-Power Designs

Nexperia has expanded its 650 V GaN FET portfolio with 35 mΩ, 50 mΩ, and 70 mΩ devices in TO-247, TOLL, and TOLT packages. The devices target AI server power supplies, industrial drives, telecom systems, renewable energy, and battery energy storage applications.

Nexperia, GaN FET, Gallium Nitride, 650V GaN, TO-247, TO-247-4, TO-247-3, TOLL, TOLT, AI Server Power Supply, LLC Converter, Power Electronics, Industrial Drives, Battery Energy Storage, BESS, Renewable Energy, Telecom Power

NXP Introduces SAF8444 Radar SoC for L2 and L2+ ADAS

NXP's SAF8444 automotive radar SoC combines 76–81 GHz radar sensing with Arm Cortex-A53 and Cortex-M7 processors, on-chip radar processing, and radar interference mitigation support for L2 and L2+ ADAS applications.

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Navitas Introduces Isolated TO-247 Package for SiC MOSFETs

Navitas has launched the UHV-TO-247-4-ISO package for 1200 V, 2300 V, and 3300 V GeneSiC MOSFETs. The package combines integrated 6000 V isolation with direct-cooled thermal management, reducing thermal resistance by up to 60% and increasing power dissipation capability by up to 150%.

Navitas, GeneSiC, SiC MOSFET, Silicon Carbide, TO-247, UHV-TO-247-4-ISO, Power Electronics, Battery Energy Storage, Solid State Transformer, Renewable Energy, Power Conversion System, Thermal Management, High Voltage Isolation, AI Datacenter Power, AMB Substrate, Aluminum Nitride

onsemi Launches GaNEXUS GaN Power Portfolio

onsemi has introduced the GaNEXUS gallium nitride power portfolio, featuring 40 V to 650 V GaN FETs and 650 V Smart devices with integrated protection. The family targets AI data centers, industrial automation, robotics, EV charging, and energy infrastructure applications.

onsemi, GaNEXUS, Gallium Nitride, GaN FET, Power Electronics, AI Data Center, Intermediate Bus Converter, Battery Backup Unit, Power Density, Power Conversion, Industrial Automation, Robotics, EV Charging, Energy Infrastructure, PFC, LLC Converter, DC-DC Converter

Texas Instruments Adds EIS Technology to 26-Cell Battery Monitor

Texas Instruments has introduced the BQ79826Z-Q1 battery monitor with an integrated EIS engine and support for up to 26 series-connected cells. The device delivers less than 2 mV voltage accuracy, supports ASIL-D functional safety requirements, and targets EV and energy storage battery management systems.

Texas Instruments, TI, BQ79826Z-Q1, Battery Monitor, Battery Management System, BMS, EIS, Electrochemical Impedance Spectroscopy, EV Battery, Energy Storage System, ASIL-D, ISO 26262, Battery Diagnostics, Cell Monitoring, State of Health, State of Charge, Automotive Electronics

Nexperia Brings QDPAK Packaging to 1200 V SiC MOSFETs

Nexperia has introduced 1200 V SiC MOSFETs in QDPAK top-side cooled packaging. The portfolio includes 17 mΩ to 80 mΩ variants, delivers up to 3 kW higher output power than D2PAK-7 devices, and targets EV, industrial, renewable energy, and datacenter power systems.

Nexperia, SiC MOSFET, Silicon Carbide, QDPAK, Top Side Cooling, Wide Bandgap, Power Electronics, EV Charger, DC-DC Converter, Photovoltaic Inverter, UPS, Motor Drive, Datacenter Power, Automotive Power, Industrial Power, Kelvin Source, 1200V MOSFET

Samtec FTSH Terminal Strips Support JTAG Connectivity

Samtec FTSH series provides 1.27 mm pitch terminal strips for JTAG, board-level interconnect, and cable assembly applications. The family includes SMT and through-hole options, up to 50 positions per row, and compliance with MIL-DTL-55302 testing requirements.

Samtec, FTSH, Terminal Strip, JTAG, IEEE 1149.1, Boundary Scan, Connectors, Board-to-Board, Cable-to-Board, FFSD, Embedded Systems, SMT Connector, Through Hole Connector, Automotive Connectors, MIL-DTL-55302, RoHS, Connector Systems

Researchers Create Multi-Function Transistor That Could Shrink Designs By 75%

In a world where reducing transistor sizes is beginning to have less of an effect on device density, researchers are trying to find new ways of packing more transistors on chips. Now, researchers claim to have created a new multi-function transistor that can shrink down designs as much as 75%.

multi-function transistor, semiconductor device, transistor shrinking, device miniaturization, negative differential transconductance, D-NDT, ZnO-Te heterojunction, frequency quadrupler, low-temperature BEOL, 3D integrated circuits, high-density electronics, AI hardware semiconductors, advanced chip integration, transistor count reduction, future semiconductor technology

YAGEO Introduces MB-Series Pt-RTDs With Nickel Lead Wires

YAGEO has introduced the MB-Series Pt-RTD temperature sensors featuring nickel lead wires, DIN EN 60751 compliance, operating temperatures from -70°C to 500°C, and 100 Ω and 1000 Ω options for HVAC, appliance, and industrial applications.

YAGEO, MB-Series, MB219, Pt-RTD, RTD Sensor, Temperature Sensor, Platinum RTD, Resistance Temperature Detector, HVAC, Consumer Appliances, Pyrolytic Ovens, DIN EN 60751, Industrial Sensors, Thermal Monitoring, Temperature Measurement, Nickel Lead Wires, Sensors

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