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Toshiba Targets AI Data Center Power Stages With 1200V SiC MOSFET

Toshiba has started test-sample shipments of the TW007D120E, a 1200V trench-gate SiC MOSFET in a top-side cooled QDPAK package for AI data center power supplies and 800V HVDC architectures.

Toshiba, TW007D120E, SiC MOSFET, silicon carbide, trench-gate MOSFET, AI data center, HVDC, 800V HVDC, power conversion, QDPAK, top-side cooling, power semiconductors, UPS systems, EV charging, photovoltaic inverter, energy storage, server power supply, high voltage MOSFET, data center power

Toshiba Targets AI Data Center Power Stages With 1200V SiC MOSFET

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