News | The Component Club

WeEn Launches SiC Power Module Platform for Solid-State Transformers

WeEn Semiconductors has introduced a platform of more than 20 SiC power modules for solid-state transformers, covering AC-DC and DC-DC stages with voltage ratings from 1200 V to 2300 V and on-resistance values down to 1.5 mΩ.

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onsemi Demonstrates Gate Driver Pairing Tool for SiC and GaN Designs

onsemi has introduced Elite Pairing Studio, a simulation tool that helps engineers compare gate driver and power switch combinations for SiC, GaN and MOSFET designs before system-level simulation.

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Toshiba Targets AI Data Center Power Stages With 1200V SiC MOSFET

Toshiba has started test-sample shipments of the TW007D120E, a 1200V trench-gate SiC MOSFET in a top-side cooled QDPAK package for AI data center power supplies and 800V HVDC architectures.

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ROHM 5th Gen SiC MOSFETs Reduce High-Temp Losses

ROHM has introduced 5th Generation EcoSiC MOSFETs for EV and industrial power systems, claiming about 30% lower ON resistance at 175°C than its 4th Generation devices, with discrete and module samples scheduled from July 2026.

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SemiQ Dual3 SiC Modules Push IGBT Drop-In Further

SemiQ’s 1200 V QSiC Dual3 half-bridge modules combine low RDSon SiC MOSFETs, optional Schottky diodes, and high power density to help replace IGBT modules in data center cooling, energy storage, and industrial power converters.

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South Korea Pushes For National Semiconductor Power Sovereignty

South Korea has launched a national task force led by Koo Sang-mo to achieve power semiconductor self-reliance by 2030, focusing on silicon carbide (SiC) and gallium nitride (GaN) technologies for EVs, power grids, AI data centers, defense, and robotics.