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Microchip Targets Solid-State Transformers With 3.3 kV SiC Modules

Microchip has introduced 3.3 kV HV-D3 mSiC power modules for solid-state transformers, combining SiC MOSFETs, Schottky diodes, and high-voltage isolation for AI data centers and medium-voltage power systems.

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Toshiba Targets AI Data Center Power Stages With 1200V SiC MOSFET

Toshiba has started test-sample shipments of the TW007D120E, a 1200V trench-gate SiC MOSFET in a top-side cooled QDPAK package for AI data center power supplies and 800V HVDC architectures.

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Infineon Expands XHP 2 CoolSiC Modules For 1500V Systems

Infineon has expanded its XHP 2 CoolSiC portfolio with new 2300V SiC MOSFET modules for 1500V DC-link wind, photovoltaic, and battery storage power converters.

Infineon, CoolSiC, XHP 2, SiC MOSFET, Silicon Carbide, Power Module, High Voltage Power, 1500V DC Link, 2300V MOSFET, Renewable Energy, Wind Power, Photovoltaic Inverter, Battery Storage, Power Converter, Industrial Inverter, Energy Storage, Power Density, Thermal Interface Material, Semiconductor Losses

Littelfuse TVS Diodes Protect Automotive HV Rails

Littelfuse TPSMC, TPSMD, and TP5.0SMDJ automotive TVS diodes add high-voltage transient protection for EV BDUs, HVAC systems, PTC heaters, GaN/SiC MOSFETs, and IGBTs.

Littelfuse, TVS diode, transient voltage suppression, TPSMC, TPSMD, TP5.0SMDJ, automotive electronics, EV power electronics, high-voltage protection, BDU, battery disconnect unit, HVAC compressor, PTC heater, GaN MOSFET, SiC MOSFET, IGBT, AEC-Q101, PPAP, IEC 61000-4-2, DO-214AB, SMC package, surge protection

ROHM 5th Gen SiC MOSFETs Reduce High-Temp Losses

ROHM has introduced 5th Generation EcoSiC MOSFETs for EV and industrial power systems, claiming about 30% lower ON resistance at 175°C than its 4th Generation devices, with discrete and module samples scheduled from July 2026.

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SemiQ Dual3 SiC Modules Push IGBT Drop-In Further

SemiQ’s 1200 V QSiC Dual3 half-bridge modules combine low RDSon SiC MOSFETs, optional Schottky diodes, and high power density to help replace IGBT modules in data center cooling, energy storage, and industrial power converters.

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Navitas GeneSiC SiC MOSFETs Add QDPAK and Low-Profile TO-247

Navitas expands its 5th-generation GeneSiC silicon carbide MOSFET portfolio with top-side cooled QDPAK and low-profile TO-247-4L packages designed for AI data centers, grid infrastructure, and industrial power systems operating at 1200 V.

Navitas Semiconductor, Navitas GeneSiC, SiC MOSFET, Silicon Carbide MOSFET, Power Semiconductors, 1200 V MOSFET, QDPAK Package, TO-247-4L Package, Top-Side Cooling, Power Electronics, AI Data Center Power, Industrial Electrification, Energy Infrastructure, High-Voltage Switching, Trench Assisted Planar, SiC Power Devices, High Power Density, Power Conversion Systems

ROHM SiC MOSFETs Power Toyota’s New bZ5 BEV in Chinese Market

ROHM’s SiC MOSFETs power Toyota’s new bZ5 BEV in China, boosting inverter efficiency and range through HAIMOSIC’s high-volume production.

ROHM, SiC MOSFET, traction inverter, Toyota bZ5, electric vehicle, BEV, HAIMOSIC, wide bandgap semiconductor, EV power module, Chinese EV market, FAW Toyota, BYD Toyota, automotive electronics, EV range, silicon carbide

Microchip Targets Solid-State Transformers With 3.3 kV SiC Modules

Toshiba Targets AI Data Center Power Stages With 1200V SiC MOSFET

Infineon Expands XHP 2 CoolSiC Modules For 1500V Systems

Littelfuse TVS Diodes Protect Automotive HV Rails

ROHM 5th Gen SiC MOSFETs Reduce High-Temp Losses

SemiQ Dual3 SiC Modules Push IGBT Drop-In Further

Navitas GeneSiC SiC MOSFETs Add QDPAK and Low-Profile TO-247

ROHM SiC MOSFETs Power Toyota’s New bZ5 BEV in Chinese Market

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