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Toshiba Targets AI Data Center Power Stages With 1200V SiC MOSFET

Toshiba has started test-sample shipments of the TW007D120E, a 1200V trench-gate SiC MOSFET in a top-side cooled QDPAK package for AI data center power supplies and 800V HVDC architectures.

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Toshiba Super Junction MOSFETs Cut Losses In Fast Power Stages

Toshiba’s DTMOSVI 600V HSD super junction MOSFETs add built-in fast-recovery diodes to reduce reverse recovery losses in SMPS, UPS, and photovoltaic power circuits, with package options including TO-247, TOLL, and DFN8×8.

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YAGEO PTLA Transformer Integrates Resonant Inductance For LLC

YAGEO expands its power magnetics portfolio with the PTLA / PTLC Series LLC transformers delivering up to 3.6 kW while integrating resonant inductance directly into the magnetic structure to reduce component count and improve power density.

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