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RECOM AC/DC Module Pushes 65 W Into Less Space

RECOM’s RACM65S-K/277 is a compact 65 W AC/DC power module with 85 VAC to 305 VAC input, over 90% peak efficiency, multiple fixed outputs, and approvals for industrial, medical, and household applications.

RECOM, RACM65S-K/277, AC/DC converter, AC/DC module, PCB-mount power supply, chassis-mount power supply, power density, wide input range, 85-305VAC, industrial power, medical power, household power, EN 55032 Class B, 2MOPP, BF applications, OVC III, encapsulated power module, open-frame power supply, power electronics

STMicroelectronics Pushes 800 VDC Power Closer to AI GPUs

STMicroelectronics expands its 800 VDC power architecture with new 12V and 6V conversion stages, enabling more efficient power delivery closer to GPUs in high-density AI data center infrastructure.

STMicroelectronics, 800 VDC, data center power, AI infrastructure, GPU power delivery, high voltage distribution, DC power conversion, power architecture, server power design, GaN power, SiC power, power electronics, data center efficiency, GPU servers, power density

Infineon CoolGaN Drive HB G5 Brings Integrated Half-Bridge Control to High-Frequency Power Designs

Infineon’s CoolGaN Drive HB 600 V G5 integrates dual GaN switches, high- and low-side drivers, and a bootstrap diode into one package, enabling high-frequency motor drives and SMPS designs with reduced parasitics, lower losses, and easier PCB layout.

Infineon, CoolGaN, GaN half bridge, GaN driver, IGI60L1111B1M, IGI60L1414B1M, IGI60L2727B1M, IGI60L5050B1M, high frequency switching, SMPS, motor drive, power electronics, bootstrap diode, TFLGA package, wide bandgap, high efficiency, PCB layout, power stage integration

iDEAL Semiconductor SuperQ 200V MOSFETs Push RDS(on) Lower in Standard Packages

iDEAL Semiconductor introduces SuperQ 200 V MOSFETs delivering industry-low RDS(on) in TOLL and TO-220 packages. Devices target motor drives, SMPS, and high-current industrial power stages.

iDEAL Semiconductor, SuperQ MOSFET, 200V MOSFET, low RDSon MOSFET, TOLL MOSFET, TO-220 MOSFET, motor drive MOSFET, power electronics, high current MOSFET, industrial power devices, SMPS MOSFET, synchronous rectification MOSFET, avalanche rated MOSFET, UIS tested MOSFET, power semiconductor technology

EPC Highlights GaN Power Advances at PCIM Asia 2025

EPC will showcase GaN solutions for AI servers, robotics, and UAVs at PCIM Asia 2025, as momentum grows for GaN to replace silicon in high-frequency power.

epc, gan, power electronics, ai servers, data centres, robotics, uavs, drones, dc-dc conversion, pcim asia 2025

EPC Launches Radiation-Hardened GaN Motor Drive Evaluation Board for Space Applications

The EPC7C021 from EPC Space is a compact, radiation-hardened GaN motor drive board for use in space and aerospace environments.

epc, gan, radiation hardened, motor drive, three phase, aerospace, robotics, evaluation board, motion control, power electronics, space systems, egan, reaction wheels, ion thrusters

Melexis MLX91299 RC Snubber Boosts SiC Module Reliability

Silicon RC snubber reduces SiC switching losses and stabilises high-voltage modules for automotive and industrial designs.

melexis, mlx91299, rc snubber, silicon snubber, sic module, power electronics, high voltage, traction inverter, onboard charger, industrial drives

ST Introduces GaNSPIN Drivers to Bring GaN Efficiency to Motor Control

ST’s GaNSPIN GaN drivers bring wide-bandgap efficiency to BLDC motor control in appliances and industrial systems with integrated protection and tunable switching.

stmicroelectronics, ganspin611, ganspin612, gan motor drivers, bldc control, wide-bandgap, motion control, motor efficiency, appliances, factory automation, power electronics, emi control, integrated drivers

GlobalFoundries and Navitas Advance U.S. GaN Manufacturing for AI Datacenters and High-Power Systems

GlobalFoundries and Navitas form a long-term partnership to expand U.S. GaN technology and manufacturing for AI datacenters, energy and high-power systems.

globalfoundries, navitas semiconductor, gan, gan-on-si, ai datacenters, power electronics, high voltage, energy infrastructure, semiconductor manufacturing, power conversion, data center hardware

Researchers Create New Gallium Oxide Semiconductor With Superior Current Capabilities

Researchers at Nagoya University have developed stable p-type gallium oxide (Ga₂O₃) diodes capable of handling twice the current of previous devices, addressing a key limitation that held the material back. Could this breakthrough make Ga₂O₃ a practical alternative to GaN, and what applications will benefit most from its improved efficiency?

gallium oxide, ga2o3, gallium nitride, gan, power electronics, pn diode, p-type semiconductor, high-efficiency semiconductors, nagoya university, energy-efficient devices, rectifiers, next-generation semiconductors, semiconductor breakthrough, electric vehicles, renewable energy, power supply design

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