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Renesas Unveils Bidirectional 650 V GaN Switch For Simpler Power Stages

Renesas has launched the TP65B110HRU, a 650 V-class bidirectional GaN switch that blocks current in both directions in one device, helping simplify solar microinverters, AI data center power systems, and onboard EV chargers.

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Microchip Expands High Voltage Lineup With New 600V Gate Driver Family

Microchip’s new 600V gate drivers support fast switching and noise tolerant control for high voltage motor and power systems.

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RECOM RVP6501 Push-Pull Driver Supports Discrete DC/DC

RECOM introduces the RVP6501 push-pull transformer driver IC for discrete isolated DC/DC converters, delivering 500mA drive capability with adaptive dead-time control and current monitoring.

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TI Unveils Power Solutions for Scalable AI Data Centres

Texas Instruments introduces new power management solutions and design resources to support scalable 800V AI data centre architectures.

texas instruments, ai, data centres, power management, gan, sic, 800v, efficiency, power conversion, nvidia, ocp

AOS Backs NVIDIA’s 800 VDC Power Architecture With SiC and GaN for Next-Generation AI Factories

AOS introduces SiC, GaN and MOSFET solutions to support NVIDIA’s 800 VDC architecture for high-efficiency AI data centers, from AC-to-DC conversion to rack-level power stages.

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YAGEO PTLA Transformer Integrates Resonant Inductance For LLC

YAGEO expands its power magnetics portfolio with the PTLA / PTLC Series LLC transformers delivering up to 3.6 kW while integrating resonant inductance directly into the magnetic structure to reduce component count and improve power density.

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onsemi Introduces Vertical GaN Semiconductors for High-Density Power Systems

onsemi introduces vertical GaN-on-GaN power semiconductors with 700 V and 1,200 V capability, cutting switching losses and boosting power density for AI and EV systems.

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Toshiba Expands DTMOSVI 600 V MOSFET Series with Four-Pin Package for Higher Efficiency

Toshiba’s new DTMOSVI 600 V MOSFETs in the TO-247-4L(X) package reduce switching loss and improve efficiency for servers, UPS and PV inverters.

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GlobalFoundries and Navitas Advance U.S. GaN Manufacturing for AI Datacenters and High-Power Systems

GlobalFoundries and Navitas form a long-term partnership to expand U.S. GaN technology and manufacturing for AI datacenters, energy and high-power systems.

globalfoundries, navitas semiconductor, gan, gan-on-si, ai datacenters, power electronics, high voltage, energy infrastructure, semiconductor manufacturing, power conversion, data center hardware

SemiQ Expands 1200 V Gen3 SiC MOSFET Line with New SOT-227 Modules

SemiQ has released new 1200 V Gen3 SiC MOSFET SOT-227 modules with 7.4, 14.5 and 34 mΩ options for chargers, solar inverters and high-power systems.

semiq, sic, mosfet, 1200 v, sot-227, power modules, battery chargers, photovoltaic inverters, energy storage, wide bandgap, power conversion, switching losses

Renesas Unveils Bidirectional 650 V GaN Switch For Simpler Power Stages

Microchip Expands High Voltage Lineup With New 600V Gate Driver Family

RECOM RVP6501 Push-Pull Driver Supports Discrete DC/DC

TI Unveils Power Solutions for Scalable AI Data Centres

AOS Backs NVIDIA’s 800 VDC Power Architecture With SiC and GaN for Next-Generation AI Factories

YAGEO PTLA Transformer Integrates Resonant Inductance For LLC

onsemi Introduces Vertical GaN Semiconductors for High-Density Power Systems

Toshiba Expands DTMOSVI 600 V MOSFET Series with Four-Pin Package for Higher Efficiency

GlobalFoundries and Navitas Advance U.S. GaN Manufacturing for AI Datacenters and High-Power Systems

SemiQ Expands 1200 V Gen3 SiC MOSFET Line with New SOT-227 Modules

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