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Why Texas Instruments Is Integrating Gate Drivers Into GaN Power Devices

Texas Instruments discusses integrated GaN power devices, reference designs and the future of AI data centre and solid-state transformer power architectures at PCIM 2026.

Texas Instruments, Harald Parzhuber, GaN, gallium nitride, integrated gate driver, power semiconductors, power electronics, reference designs, AI data centres, solid-state transformers, 650V GaN, PCIM 2026

From HEXFET to GaN: Alex Lidow on the Future of Power Electronics

Alex Lidow discusses the HEXFET, GaN, AI data centres, robotics, space electronics and the future of power conversion.

Alex Lidow, EPC, Efficient Power Conversion, GaN, gallium nitride, HEXFET, power MOSFETs, power electronics, AI data centres, robotics, drones, LiDAR, space electronics, DC-DC conversion, PCIM 2026

Renesas Launches Gen IV Plus 650V GaN FETs

Renesas unveils Gen IV Plus 650V GaN FETs for AI, EV, and industrial power—smaller die, better efficiency, and silicon driver compatibility.

Renesas, GaN, power electronics, wide bandgap, energy efficiency, EV charging, AI data centres, UPS, solar inverters, transistors, industrial systems, high voltage, switching devices

Why Texas Instruments Is Integrating Gate Drivers Into GaN Power Devices

From HEXFET to GaN: Alex Lidow on the Future of Power Electronics

Renesas Launches Gen IV Plus 650V GaN FETs

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