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TDK B82722V6 Choke Supports 1250 V DC Designs

TDK’s B82722V6B040 common-mode choke series supports 1250 V DC converter and drive designs in a compact vertical package, with inductance options from 3.3 mH to 22 mH and rated currents up to 3.0 A for high-voltage EMI filtering.

TDK, EPCOS, common-mode choke, EMI choke, high-voltage choke, ring-core choke, power converter, motor drive, switch-mode power supply, SiC, GaN, EMI suppression, 1250 V DC, 630 V AC, industrial power, common-mode filter, power electronics, wave soldering, passive components, B82722V6B040

EPC9186HC2 and HC3 Bring GaN to 5 kW Motor Drives

EPC’s EPC9186HC2 and EPC9186HC3 evaluation boards use EPC2361 GaN FETs to support 3-phase BLDC motor drives up to 5 kW, targeting robotics, industrial automation, light EVs, forklifts, and drones.

EPC, EPC2361, EPC9186HC2, EPC9186HC3, GaN, eGaN, gallium nitride, motor drive, BLDC inverter, 3-phase inverter, robotics, industrial automation, light EV, electric scooter, forklift, agricultural machinery, drone power, field oriented control, motion control, power electronics

EPC GaN Power Stages Push Motor Drives Toward Simpler Control

EPC’s new 100 V integrated GaN power stages combine FETs, gate drive, and protection in a compact package, giving motor drive, robotics, and power conversion designers tighter shutdown control, 100% duty-cycle support, and simpler system integration.

EPC, EPC23108, EPC23109, EPC23110, EPC23111, GaN, eGaN, power stage IC, motor drives, robotics, drones, humanoid robots, DC-DC converters, Class-D audio, motion control, power electronics, half-bridge, gate driver, 100 V, QFN package

YAGEO Targets WBG EMI Filters With R41D V234 Capacitors

YAGEO’s R41D V234 Series brings high dV/dt and increased ripple current capability to Y2/X1 film capacitors for SiC and GaN power systems, helping shrink EMI filters in automotive and industrial power conversion designs.

YAGEO, R41D V234, film capacitor, EMI suppression capacitor, Y2 capacitor, X1 capacitor, metallized polypropylene, wide bandgap, SiC, GaN, EMI filter, onboard charger, DC-DC converter, solar inverter, energy storage system, EV charging station, three-phase UPS, HVDC filter, high dV/dt, ripple current

EPC GaN Inverter Board Targets Faster BLDC Prototyping

EPC’s EPC91121 gives engineers a compact three-phase GaN inverter platform for 24 V-class BLDC development, combining 50 ARMS output, integrated sensing, controller support, and switching up to 150 kHz.

EPC, EPC91121, EPC2366, GaN, eGaN, BLDC motor drive, three-phase inverter, motor control, power electronics, field-oriented control, space-vector PWM, 24 V motor drive, robotics, drones, industrial automation, handheld power tools, evaluation board, power transistor

Infineon XENSIV TLE4978 Current Sensor Cuts Noise In Fast Power Loops

Infineon’s XENSIV TLE4978 is a coreless isolated magnetic current sensor combining Hall and coil sensing on one die, delivering 9 MHz bandwidth, low noise, fast overcurrent detection, and support for EV charging, DC-DC conversion, PV inverters, and AI server power.

Infineon, XENSIV, TLE4978, current sensor, magnetic current sensor, coreless current sensor, Hall sensor, Rogowski coil, isolated current sensing, SiC, GaN, EV charger, onboard charger, DC-DC converter, PV inverter, AI data center, overcurrent detection, zero crossing detection, DSO-16, AEC-Q100

YAGEO Film Capacitors Target EMI Stress in WBG Power

YAGEO’s R41D V234 Series is a family of Y2/X1 metallized polypropylene film capacitors for EMI suppression in SiC and GaN power systems, offering 300 VAC rating, 1200 VDC recommendation, high dV/dt capability, and increased ripple current handling.

YAGEO, R41D V234 Series, film capacitor, EMI suppression capacitor, Y2 capacitor, X1 capacitor, metallized polypropylene, wide-bandgap power, SiC, GaN, high dV/dt, ripple current, AC input filter, HVDC filter, on-board charger, DC/DC converter, solar inverter, EV charging, UPS, AEC-Q200

South Korea Pushes For National Semiconductor Power Sovereignty

South Korea has launched a national task force led by Koo Sang-mo to achieve power semiconductor self-reliance by 2030, focusing on silicon carbide (SiC) and gallium nitride (GaN) technologies for EVs, power grids, AI data centers, defense, and robotics.

South Korea, power semiconductors, Koo Sang-mo, silicon carbide, SiC, gallium nitride, GaN, EVs, AI data centers, power grids, defense technology, robotics, semiconductor sovereignty, national infrastructure, energy security

EPC Reveals GaN Motor Drive for Humanoid Robots and UAVs

EPC’s new GaN-powered EPC91118 reference design delivers 15 ARMS per phase in a compact 32 mm board for humanoid joints and drones.

EPC, GaN, Motor Drivers, BLDC Control, Humanoid Robotics, UAV Systems, Power Electronics, Embedded Systems, Motion Control, ePower Stage, RS485 Communication, STM32 Microcontroller, Robotics, Drone Design, Motor Control Solutions

Renesas Launches Gen IV Plus 650V GaN FETs

Renesas unveils Gen IV Plus 650V GaN FETs for AI, EV, and industrial power—smaller die, better efficiency, and silicon driver compatibility.

Renesas, GaN, power electronics, wide bandgap, energy efficiency, EV charging, AI data centres, UPS, solar inverters, transistors, industrial systems, high voltage, switching devices

TDK B82722V6 Choke Supports 1250 V DC Designs

EPC9186HC2 and HC3 Bring GaN to 5 kW Motor Drives

EPC GaN Power Stages Push Motor Drives Toward Simpler Control

YAGEO Targets WBG EMI Filters With R41D V234 Capacitors

EPC GaN Inverter Board Targets Faster BLDC Prototyping

Infineon XENSIV TLE4978 Current Sensor Cuts Noise In Fast Power Loops

YAGEO Film Capacitors Target EMI Stress in WBG Power

South Korea Pushes For National Semiconductor Power Sovereignty

EPC Reveals GaN Motor Drive for Humanoid Robots and UAVs

Renesas Launches Gen IV Plus 650V GaN FETs

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