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Why Texas Instruments Is Integrating Gate Drivers Into GaN Power Devices

Texas Instruments discusses integrated GaN power devices, reference designs and the future of AI data centre and solid-state transformer power architectures at PCIM 2026.

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From HEXFET to GaN: Alex Lidow on the Future of Power Electronics

Alex Lidow discusses the HEXFET, GaN, AI data centres, robotics, space electronics and the future of power conversion.

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onsemi Demonstrates Gate Driver Pairing Tool for SiC and GaN Designs

onsemi has introduced Elite Pairing Studio, a simulation tool that helps engineers compare gate driver and power switch combinations for SiC, GaN and MOSFET designs before system-level simulation.

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Melexis Introduces Digital Current Sensor for High-Power EV Systems

Melexis has introduced the MLX91229 Hall-effect current sensor with a sigma-delta digital output for 200A to 2000A automotive current sensing in traction inverter and EV applications.

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EPC Introduces 23 mm GaN Inverter for Robots and Drones

EPC has introduced the EPC91132, a 23 mm diameter GaN-based BLDC motor drive inverter for drones and humanoid robots. Built around the EPC33110 power module, the design delivers 11 ARMS continuous current at 48 V and supports PWM frequencies up to 100 kHz.

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EPC Introduces Three-Phase GaN Inverter Platforms for BLDC Motor Development

EPC has introduced the EPC91128, EPC91129, EPC91130, and EPC91131 three-phase BLDC inverter platforms. Based on EPC23108–EPC23111 ePower Stage ICs, the boards support 10V to 80V operation and output currents up to 29ARMS.

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EPC Demonstrates 800 V To 12.5 V AI Power Converter Without 48 V Stage

EPC's EPC91123 evaluation board converts 800 VDC directly to 12.5 VDC at up to 6 kW, achieving 98.2% efficiency while eliminating the need for a 48 V intermediate stage.

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ST Expands 700V PowerGaN Devices For AI And Robotics

STMicroelectronics has added seven 700V PowerGaN HEMTs to its STPOWER portfolio, targeting AI servers, robotics, industrial power systems, and high-density power conversion designs with current ratings up to 29 A.

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Infineon Shrinks Mobile Power Paths With CoolGaN BDS

Infineon has expanded its CoolGaN BDS 40 V G3 family with two bidirectional GaN switching devices for smartphones, notebooks, and wearables, reducing PCB footprint while improving switching and leakage performance.

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TDK B82722V6 Choke Supports 1250 V DC Designs

TDK’s B82722V6B040 common-mode choke series supports 1250 V DC converter and drive designs in a compact vertical package, with inductance options from 3.3 mH to 22 mH and rated currents up to 3.0 A for high-voltage EMI filtering.

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