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Filtering by tag: "wide bandgap"

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Infineon CoolGaN Drive HB G5 Brings Integrated Half-Bridge Control to High-Frequency Power Designs

Infineon’s CoolGaN Drive HB 600 V G5 integrates dual GaN switches, high- and low-side drivers, and a bootstrap diode into one package, enabling high-frequency motor drives and SMPS designs with reduced parasitics, lower losses, and easier PCB layout.

Infineon, CoolGaN, GaN half bridge, GaN driver, IGI60L1111B1M, IGI60L1414B1M, IGI60L2727B1M, IGI60L5050B1M, high frequency switching, SMPS, motor drive, power electronics, bootstrap diode, TFLGA package, wide bandgap, high efficiency, PCB layout, power stage integration

SemiQ Expands 1200 V Gen3 SiC MOSFET Line with New SOT-227 Modules

SemiQ has released new 1200 V Gen3 SiC MOSFET SOT-227 modules with 7.4, 14.5 and 34 mΩ options for chargers, solar inverters and high-power systems.

semiq, sic, mosfet, 1200 v, sot-227, power modules, battery chargers, photovoltaic inverters, energy storage, wide bandgap, power conversion, switching losses

onsemi Introduces Vertical GaN Semiconductors for High-Density Power Systems

onsemi introduces vertical GaN-on-GaN power semiconductors with 700 V and 1,200 V capability, cutting switching losses and boosting power density for AI and EV systems.

onsemi, vertical gan, vgan, gan-on-gan, power semiconductors, ai data centres, electric vehicles, renewable energy, energy storage, high voltage, power density, efficiency, power conversion, wide bandgap, high frequency

Navitas Expands GaN and SiC Power Devices for 800 V AI Data Centres

Navitas extends its GaNFast and GeneSiC semiconductor portfolio to support NVIDIA’s 800 V AI data-centre architecture with higher efficiency and density.

navitas semiconductor, ganfast, genesic, sic, gan, 800 v, ai data centre, power conversion, wide bandgap, gansafe, power chip, data centre, semiconductors, power management

EPC Develops 6 kW 800 VDC GaN Converter for Next-Generation AI Data Centres

EPC’s new 6 kW GaN converter uses an ISOP topology to step 800 VDC to 12.5 V at 97 % efficiency, advancing power delivery for future AI data centres.

epc, gallium nitride, gan converter, isop, 800 vdc, 12.5 v, ai data centre, power conversion, wide bandgap, nvidia, llc topology, epc2305, epc2366, power management

Renesas Powers 800V Direct Current Architecture for AI Data Centres

Renesas’ GaN FETs and power semiconductors enable efficient 800V DC distribution in AI data centres, improving power density and reducing energy losses.

renesas electronics, gan fet, 800v dc, data centre, ai infrastructure, power conversion, wide bandgap, mosfet, llc dcx, energy efficiency, semiconductors

Toshiba 650V SiC MOSFETs Boost Efficiency With Compact TOLL Package

Toshiba has launched 3rd generation 650V SiC MOSFETs in a compact TOLL package, cutting switching losses and improving power density for industrial and energy systems.

toshiba, sic, mosfet, wide bandgap, power electronics, toll package, data centre, ups, ev charging, pv inverter

NOVOSENSE Tackles GaN Drive Complexity with Integrated High-Voltage Half-Bridge Driver

NOVOSENSE's NSD2622N half-bridge driver integrates gate bias generation for E-mode GaN, simplifying high-voltage designs and improving reliability.

novosense, nsd2622n, gan driver ic, half-bridge driver, enhancement-mode gan, dv/dt immunity, gate voltage regulation, bootstrap driver, power electronics, high voltage, switching speed, driver integration, wide bandgap

Taiwan Semiconductor Launches 1200V SiC MPS Diodes up to 40A

Taiwan Semi introduces 1200V SiC Schottky diodes with MPS design, qualified for automotive and industrial systems, available in ratings up to 40A.

Taiwan Semiconductor, SiC diode, 1200V, MPS, wide bandgap, Schottky, EV charging, energy storage, UPS, telecom power, rectifier

Renesas Launches Gen IV Plus 650V GaN FETs

Renesas unveils Gen IV Plus 650V GaN FETs for AI, EV, and industrial power—smaller die, better efficiency, and silicon driver compatibility.

Renesas, GaN, power electronics, wide bandgap, energy efficiency, EV charging, AI data centres, UPS, solar inverters, transistors, industrial systems, high voltage, switching devices