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Infineon’s 1ED301xMC12I Drivers Ease The Shift Toward High Speed SiC Switching

Infineon’s 1ED301xMC12I isolated gate drivers offer opto compatible inputs, 300 kV per microsecond CMTI and precise timing for SiC MOSFETs, enabling faster switching and reliable isolation in motor drives, EV chargers and renewable energy systems.

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Alpha and Omega’s 600V αMOS E2 Device Targets High Stress Power Designs

AOS introduces the αMOS E2 600V MOSFET with robust diode behavior and strong switching performance for high density power and solar systems.

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onsemi Introduces Top Cool SiC Packaging for High Power Designs

onsemi adds a top cool T2PAK package to its EliteSiC MOSFETs, improving thermal performance and power density for EV and industrial designs.

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Littelfuse IX3407B Gate Driver Shrinks Isolation Circuitry and Speeds Switching

Littelfuse IX3407B gate driver integrates 2.5 kV capacitive isolation, 7 A peak drive strength, and fast propagation for motor drives, inverters, and UPS systems. Tags: Littelfuse, IX3407B, Gate Driver, Isolated Driver, MOSFET Driver, IGBT Driver, Motor

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Renesas Launches Gen IV Plus 650V GaN FETs

Renesas unveils Gen IV Plus 650V GaN FETs for AI, EV, and industrial power—smaller die, better efficiency, and silicon driver compatibility.

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