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Navitas Pushes 800 VDC Directly to 6 V in AI Power

Navitas introduces an 800 VDC to 6 V power delivery board that removes the intermediate bus stage, enabling direct high-voltage to low-voltage conversion for AI data center power systems.

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STMicroelectronics Pushes 800 VDC Power Closer to AI GPUs

STMicroelectronics expands its 800 VDC power architecture with new 12V and 6V conversion stages, enabling more efficient power delivery closer to GPUs in high-density AI data center infrastructure.

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Advanced Energy LPP200 AC-DC Supplies Target Sub-1 Inch Systems

Advanced Energy introduces the LPP200 series, a 200 W low-profile AC-DC power supply measuring just 0.75 inches high and designed for compact medical and industrial equipment requiring high power density and strict safety compliance.

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Toshiba Adds Nine MOSFETs for 24V and 48V Industrial Power Systems

Toshiba has introduced nine N-channel MOSFETs for industrial power systems. The lineup includes 100V devices for 48V power rails and 60V devices for 24V systems in three package options.

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Nexperia Expands 650 V GaN FET Portfolio for High-Power Designs

Nexperia has expanded its 650 V GaN FET portfolio with 35 mΩ, 50 mΩ, and 70 mΩ devices in TO-247, TOLL, and TOLT packages. The devices target AI server power supplies, industrial drives, telecom systems, renewable energy, and battery energy storage applications.

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YAGEO SCF76X Chokes For High-Current Three-Phase EMI

YAGEO’s SCF76X three-phase common mode chokes bring nanocrystalline core technology, 65 A to 110 A current handling, low DCR, and industrial-grade thermal performance to modern inverter, HVAC, and power conversion designs.

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Alpha and Omega Semiconductor MOSFETs Target AI Server Power Density

Alpha and Omega Semiconductor has introduced the AONC40202 and AONC68816 MOSFETs in DFN 3.3 x 3.3 double-sided cooling source-down packages for AI server Intermediate Bus Converter applications.

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Renesas Powers 800V Direct Current Architecture for AI Data Centres

Renesas’ GaN FETs and power semiconductors enable efficient 800V DC distribution in AI data centres, improving power density and reducing energy losses.

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SemiQ Dual3 SiC Modules Push IGBT Drop-In Further

SemiQ’s 1200 V QSiC Dual3 half-bridge modules combine low RDSon SiC MOSFETs, optional Schottky diodes, and high power density to help replace IGBT modules in data center cooling, energy storage, and industrial power converters.

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Nanopower nPZero IC Changes How IoT Sensors Use Energy

Nanopower’s nPZero power-saving IC allows IoT devices to monitor up to four sensors while the host MCU remains powered down, reducing system energy consumption and enabling longer battery life in remote sensing applications.

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