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SemiQ Dual3 SiC Modules Push IGBT Drop-In Further

SemiQ’s 1200 V QSiC Dual3 half-bridge modules combine low RDSon SiC MOSFETs, optional Schottky diodes, and high power density to help replace IGBT modules in data center cooling, energy storage, and industrial power converters.

SemiQ, QSiC Dual3, silicon carbide, SiC MOSFET, half-bridge module, 1200 V, Schottky barrier diode, power converter, data center cooling, liquid chiller, energy storage, grid converter, industrial drive, IGBT replacement, power density, RDSon, active front end, compressor drive, power module

SemiQ Dual3 SiC Modules Push IGBT Drop-In Further

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