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Filtering by tag: "1200 V"

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MCC Introduces SICW30120DG5M 1200 V 30 A SiC Schottky Diode

MCC has introduced the SICW30120DG5M-BP 1200 V 30 A SiC Schottky Barrier Diode with zero reverse recovery, 1.6 V maximum forward voltage and 180 A surge current capability.

WeEn Launches SiC Power Module Platform for Solid-State Transformers

WeEn Semiconductors has introduced a platform of more than 20 SiC power modules for solid-state transformers, covering AC-DC and DC-DC stages with voltage ratings from 1200 V to 2300 V and on-resistance values down to 1.5 mΩ.

SemiQ Dual3 SiC Modules Push IGBT Drop-In Further

SemiQ’s 1200 V QSiC Dual3 half-bridge modules combine low RDSon SiC MOSFETs, optional Schottky diodes, and high power density to help replace IGBT modules in data center cooling, energy storage, and industrial power converters.

SemiQ, QSiC Dual3, silicon carbide, SiC MOSFET, half-bridge module, 1200 V, Schottky barrier diode, power converter, data center cooling, liquid chiller, energy storage, grid converter, industrial drive, IGBT replacement, power density, RDSon, active front end, compressor drive, power module

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