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Toshiba Targets AI Data Center Power Stages With 1200V SiC MOSFET

Toshiba has started test-sample shipments of the TW007D120E, a 1200V trench-gate SiC MOSFET in a top-side cooled QDPAK package for AI data center power supplies and 800V HVDC architectures.

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Navitas Pushes 800 VDC Directly to 6 V in AI Power

Navitas introduces an 800 VDC to 6 V power delivery board that removes the intermediate bus stage, enabling direct high-voltage to low-voltage conversion for AI data center power systems.

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TI 800 VDC Power Architecture Reduces Conversion Stages

Texas Instruments introduces an 800 VDC power architecture aligned with NVIDIA that reduces AI data center power delivery to two stages, removing intermediate rails and shifting constraints toward high-density local conversion.

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Navitas’ 10 kW GaN Converter Pushes HVDC Data Centers Toward Higher Power Density

Navitas’ 10 kW GaN based DC DC converter delivers 98.5 percent peak efficiency and high power density for 800 V DC and plus minus 400 V DC data centers, supporting fast switching and dynamic AI workloads.

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