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Alpha and Omega’s 600V αMOS E2 Device Targets High Stress Power Designs

AOS introduces the αMOS E2 600V MOSFET with robust diode behavior and strong switching performance for high density power and solar systems.

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EPC’s GaN Integration Brings New Agility to Robotic Motion

EPC’s EPC91120 reference design combines GaN power, sensing, and control in a 32 mm module, improving efficiency and responsiveness in robot joints and UAVs.

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Infineon Expands OptiMOS 7 MOSFET Line for Switching and Motor Drives

Infineon has released new OptiMOS 7 MOSFETs for industrial and consumer designs, with 25 V and 40 V variants optimised for switching and motor drives.

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Toshiba 100V TPH2R70AR5 MOSFET Improves Efficiency and Switching Speed

Toshiba’s 100V TPH2R70AR5 N-channel MOSFET offers 2.7 mΩ RDS(on), 37% lower Qg, and faster recovery for efficient SMPS and DC-DC converters in data centres and industrial systems.

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Samsung Electro-Mechanics Introduces 100 nF 0805 MLCC for Hybrid Inverters

Samsung Electro-Mechanics releases an 0805 MLCC rated 250 V, 100 nF (X7T), AEC-Q200 qualified for hybrid and mild hybrid vehicle inverter snubber circuits.

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Tata Elxsi Partners with Infineon to Drive India’s EV Innovation

Tata Elxsi and Infineon Technologies have partnered to co-develop electric vehicle systems for India, including inverters, battery management, and onboard chargers. The collaboration blends system design with advanced semiconductors like SiC devices and supports ISO 26262 safety standards. Aimed at accelerating India’s fast-growing EV market, the partnership also targets future sectors like eVTOL and off-highway electric vehicles with cost-efficient, production-ready platform solutions.

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Power Integrations Pushes Flyback Into 440 W Range

Power Integrations has introduced TOPSwitchGaN flyback ICs that push offline flyback power supplies to 440 W, offering a simpler alternative to resonant and LLC designs in appliances, e-bike chargers, and industrial systems.

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Toshiba 650V SiC MOSFETs Boost Efficiency With Compact TOLL Package

Toshiba has launched 3rd generation 650V SiC MOSFETs in a compact TOLL package, cutting switching losses and improving power density for industrial and energy systems.

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Würth Elektronik Publishes SEPIC Guide with Coupled Inductor Design Tips

Würth Elektronik’s new SEPIC guide highlights coupled inductor benefits, ripple current steering, and EMI reduction for demanding power designs.

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EPC’s First Gen 7 eGaN FET Pushes Power Density in 40 V Designs

EPC’s new 40 V Gen 7 eGaN transistor offers low RDS(on) and reduced switching loss for compact, high efficiency power stages.

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