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Filtering by tag: "energy storage"
Clear tag filterToshiba Targets AI Data Center Power Stages With 1200V SiC MOSFET
Toshiba has started test-sample shipments of the TW007D120E, a 1200V trench-gate SiC MOSFET in a top-side cooled QDPAK package for AI data center power supplies and 800V HVDC architectures.
Read MoreSemiQ Dual3 SiC Modules Push IGBT Drop-In Further
SemiQ’s 1200 V QSiC Dual3 half-bridge modules combine low RDSon SiC MOSFETs, optional Schottky diodes, and high power density to help replace IGBT modules in data center cooling, energy storage, and industrial power converters.
Read MoreInfineon’s 1ED301xMC12I Drivers Ease The Shift Toward High Speed SiC Switching
Infineon’s 1ED301xMC12I isolated gate drivers offer opto compatible inputs, 300 kV per microsecond CMTI and precise timing for SiC MOSFETs, enabling faster switching and reliable isolation in motor drives, EV chargers and renewable energy systems.
Read MoreAmphenol TS1 Connectors Handle High Power in Harsh Systems
Amphenol TS1 power connectors deliver high voltage and high current performance with EMI shielding for harsh industrial and energy systems.
Read MoreSemiQ Gen3 SiC Modules Push Current Density for High Power Systems
New SiC power modules offer high current capability and low thermal resistance for EV and industrial systems.
Read Moreonsemi Introduces Top Cool SiC Packaging for High Power Designs
onsemi adds a top cool T2PAK package to its EliteSiC MOSFETs, improving thermal performance and power density for EV and industrial designs.
Read MoreLittelfuse 200 V X4-Class MOSFET Targets High-Current Power Systems
The Littelfuse MMIX1T500N20X4 delivers 200 V and 480 A performance with topside cooling for compact high current power systems.
Read MoreSemiQ Expands 1200 V Gen3 SiC MOSFET Line with New SOT-227 Modules
SemiQ has released new 1200 V Gen3 SiC MOSFET SOT-227 modules with 7.4, 14.5 and 34 mΩ options for chargers, solar inverters and high-power systems.
Read Moreonsemi Introduces Vertical GaN Semiconductors for High-Density Power Systems
onsemi introduces vertical GaN-on-GaN power semiconductors with 700 V and 1,200 V capability, cutting switching losses and boosting power density for AI and EV systems.
Read MoreNXP Integrates EIS into Battery Management Chipset for Real-Time Health Diagnostics
NXP’s new BMS chipset performs hardware-based Electrochemical Impedance Spectroscopy to improve battery health insight and fast-charging safety.
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