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EPC 100 V GaN Power Stage ICs Enter Mass Production for Motor Drives

EPC begins mass production of its EPC23108, EPC23109, EPC23110 and EPC23111 100 V integrated GaN power-stage ICs for robotics, drones, industrial motor drives and power conversion.

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EPC Launches EPC2370 GaN FET for AI Server Power

EPC starts mass production of the EPC2370 18 V GaN FET, offering 0.28 mΩ typical RDS(on), 101 A continuous current and a 22 V transient rating for high-current AI server and DC/DC power conversion.

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Diodes Tightens SR Control on the LLC Secondary Side

Diodes’ APR3492 is a dual-channel synchronous rectification controller for LLC converters, built to improve turn-off timing, light-load behavior, and secondary-side control across changing operating modes.

Diodes, APR3492, synchronous rectification, LLC converter, resonant converter, SR controller, MOSFET driver, secondary-side control, AC/DC adapters, SMPS, LCD TV power, LED TV power, CCM, CrCM, DCM, light-load mode, turn-off delay, SO-8, power electronics, LLC secondary

Navitas’ 10 kW GaN Converter Pushes HVDC Data Centers Toward Higher Power Density

Navitas’ 10 kW GaN based DC DC converter delivers 98.5 percent peak efficiency and high power density for 800 V DC and plus minus 400 V DC data centers, supporting fast switching and dynamic AI workloads.

Navitas, GaNFast, GaN FET, HVDC, 10kW converter, 800V DC, power density, full brick module, 98 percent efficiency, 1MHz switching, synchronous rectification, AI data center power, GPU power delivery, GaN 650V, GaN 100V, rack distribution, high voltage bus, power architecture

EPC’s First Gen 7 eGaN FET Pushes Power Density in 40 V Designs

EPC’s new 40 V Gen 7 eGaN transistor offers low RDS(on) and reduced switching loss for compact, high efficiency power stages.

EPC, Efficient Power Conversion, EPC2366, GaN FET, eGaN transistor, Gen 7 GaN, 40 V FET, low RDSon, QG, synchronous rectification, DC DC conversion, AI servers, motor drives, power electronics, high density power, PQFN package

Taiwan Semiconductor Launches PerFET™ 80V and 100V Power MOSFETs

Taiwan Semi introduces 80V and 100V PerFET™ MOSFETs for high-frequency switching in server, telecom, and automotive power systems.

Taiwan Semiconductor, PerFET, Power MOSFET, PDFN56U, synchronous rectification, DC DC converter, SMPS, server power, automotive MOSFET, BLDC, AEC Q101

EPC 100 V GaN Power Stage ICs Enter Mass Production for Motor Drives

EPC Launches EPC2370 GaN FET for AI Server Power

Diodes Tightens SR Control on the LLC Secondary Side

Navitas’ 10 kW GaN Converter Pushes HVDC Data Centers Toward Higher Power Density

EPC’s First Gen 7 eGaN FET Pushes Power Density in 40 V Designs

Taiwan Semiconductor Launches PerFET™ 80V and 100V Power MOSFETs

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