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Vishay Launches First Automotive Y1-Rated Ceramic Capacitors in SMD Package

Vishay’s SMDY1 Automotive Series are the first Y1-rated ceramic capacitors in SMD format, combining 500 VAC rating, 4.7 nF capacitance, and Class IIB humidity grade for EV power systems.

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Microchip DualPack 3 IGBT7 Modules Boost Power Density and Simplify Design

Microchip’s DualPack 3 IGBT7 modules cut losses up to 20%, support 175 °C overload, and reduce system complexity for motor drives, renewables, and traction.

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ROHM Launches DOT-247 SiC Module with 2.3× Power Density

ROHM’s new DOT-247 SiC module delivers 2.3× power density, 15% lower thermal resistance, and supports advanced multi-level power topologies.

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Wolfspeed Launches 200 mm SiC Wafers for High-Volume Power Device Production

Wolfspeed’s 200 mm SiC wafers and epitaxy are now commercially available, improving yields and scalability for power electronics makers worldwide.

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Researchers Create New Gallium Oxide Semiconductor With Superior Current Capabilities

Researchers at Nagoya University have developed stable p-type gallium oxide (Ga₂O₃) diodes capable of handling twice the current of previous devices, addressing a key limitation that held the material back. Could this breakthrough make Ga₂O₃ a practical alternative to GaN, and what applications will benefit most from its improved efficiency?

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Murata Expands Isolated DC-DC Converters for PoE Devices

Murata introduces compact isolated DC-DC converters for IEEE 802.3af PoE systems, delivering efficient 5 V power in space-constrained devices such as cameras and biometric units.

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EPC Highlights GaN Power Advances at PCIM Asia 2025

EPC will showcase GaN solutions for AI servers, robotics, and UAVs at PCIM Asia 2025, as momentum grows for GaN to replace silicon in high-frequency power.

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EPC Launches Radiation-Hardened GaN Motor Drive Evaluation Board for Space Applications

The EPC7C021 from EPC Space is a compact, radiation-hardened GaN motor drive board for use in space and aerospace environments.

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Toshiba 650V SiC MOSFETs Boost Efficiency With Compact TOLL Package

Toshiba has launched 3rd generation 650V SiC MOSFETs in a compact TOLL package, cutting switching losses and improving power density for industrial and energy systems.

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Infineon Expands OptiMOS 6 Portfolio with 150 V Automotive MOSFETs

Infineon’s OptiMOS 6 150 V MOSFETs deliver 2.5 mΩ RDS(on), low switching losses, and thermal resistance of 0.4 K/W, with TOLL, TOLG, and TOLT packaging for xEV designs.

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