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Filtering by tag: "gallium nitride"
Clear tag filterST Expands 700V PowerGaN Devices For AI And Robotics
STMicroelectronics has added seven 700V PowerGaN HEMTs to its STPOWER portfolio, targeting AI servers, robotics, industrial power systems, and high-density power conversion designs with current ratings up to 29 A.
Read MoreInfineon Shrinks Mobile Power Paths With CoolGaN BDS
Infineon has expanded its CoolGaN BDS 40 V G3 family with two bidirectional GaN switching devices for smartphones, notebooks, and wearables, reducing PCB footprint while improving switching and leakage performance.
Read MoreEPC9186HC2 and HC3 Bring GaN to 5 kW Motor Drives
EPC’s EPC9186HC2 and EPC9186HC3 evaluation boards use EPC2361 GaN FETs to support 3-phase BLDC motor drives up to 5 kW, targeting robotics, industrial automation, light EVs, forklifts, and drones.
Read MoreSouth Korea Pushes For National Semiconductor Power Sovereignty
South Korea has launched a national task force led by Koo Sang-mo to achieve power semiconductor self-reliance by 2030, focusing on silicon carbide (SiC) and gallium nitride (GaN) technologies for EVs, power grids, AI data centers, defense, and robotics.
Read MoreEPC Develops 6 kW 800 VDC GaN Converter for Next-Generation AI Data Centres
EPC’s new 6 kW GaN converter uses an ISOP topology to step 800 VDC to 12.5 V at 97 % efficiency, advancing power delivery for future AI data centres.
Read MoreResearchers Create New Gallium Oxide Semiconductor With Superior Current Capabilities
Researchers at Nagoya University have developed stable p-type gallium oxide (Ga₂O₃) diodes capable of handling twice the current of previous devices, addressing a key limitation that held the material back. Could this breakthrough make Ga₂O₃ a practical alternative to GaN, and what applications will benefit most from its improved efficiency?
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